VVZ175-16IO7

IdAVM=110/167 AVRRM=1200-1600 V

E~

VRSMVDSM130015001700

VRRMVDRM120014001600

Type

EDC

231

A

C~

D~

V V

VVZ 110-12io7VVZ 110-14io7

VVZ 175-12io7VVZ 175-14io7VVZ 175-16io7

B

32

SymbolIdAV

IFRMS, ITRMSIFSM, ITSM

Test ConditionsTC = 85°C; moduleper legTVJ = 45°C;VR = 0TVJ = TVJMVR = 0

I2t

TVJ = 45°CVR = 0TVJ = TVJMVR = 0

(di/dt)cr

t = 10 ms(50 Hz), sinet = 8.3 ms(60 Hz), sinet = 10 ms(50 Hz), sinet = 8.3 ms(60 Hz), sinet = 10 ms(50 Hz), sinet = 8.3 ms(60 Hz), sinet = 10 ms(50 Hz), sinet = 8.3 ms(60 Hz), sine

Maximum RatingsVVZ 110VVZ 1751105811501230100010706600628050004750

150

167891500160013501450112001075091008830

AAAAAAA2sA2sA2sA2sA/ms

Features

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1

A+

B-

Package with screw terminalsIsolation voltage 3000 V~Planar passivated chipsUL registered E72873

Applications

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TVJ = TVJMrepetitive, IT = 50 Af =400 Hz, tP =200 msVD = 2/3 VDRMIG = 0.3 A,non repetitive,diG/dt = 0.3 A/ms, IT = 1/3 • IdAV

TVJ = TVJM; VDR = 2/3 VDRM

RGK = ¥; method 1 (linear voltage rise)TVJ = TVJMIT = ITAVM

tp=30mstp =500ms tp=10ms

£

££

q

Input rectifier for PWM converterInput rectifier for switch mode powersupplies (SMPS)

Softstart capacitor charging

50010001010510.5

A/msV/msVWWWW°C°C°CV~V~NmNmg

Advantages

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(dv/dt)crVRGMPGMPGAVMTVJTVJMTstgVISOLMdWeight

Easy to mount with two screwsSpace and weight savings

Improved temperature and powercycling

-40...+125

125-40...+125

50/60 Hz, RMSt = 1 min

t = 1 sIISOL £ 1 mA

Mounting torque (M6)

Terminal connection torque (M6)typ.

250030005±15 %5±15 %

300

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.IXYS reserves the right to change limits, test conditions and dimensions.

© 2000 IXYS All rights reserved

1 - 2

VVZ 110VVZ 175SymbolIR, IDVF, VTVT0rTVGTIGTVGDIGDILIHtgdRthJCRthJHdSdAa

Test ConditionsVR = VRRM; VD = VDRMIF, IT = 200 A, TVJ = 25°CFor power-loss calculations only(TVJ = 125°C)VD = 6 V;VD = 6 V;TVJ = TVJM;TVJ = TVJM;

TVJ = 25°CTVJ = -40°CTVJ = 25°CTVJ = -40°CVD = 2/3 VDRMVD = 2/3 VDRM

TVJ = 25°C

£££££££££0.650.1080.80.133

109.450

TVJ = TVJMTVJ = 25°C

£££

1.750.856

1.51.61002000.2545020020.460.0770.550.092

Characteristic ValuesVVZ 110VVZ 175

50.3

1.570.853.5

mAmAVVmWVVmAmAVmAmAmAmsK/WK/WK/WK/Wmmmmm/s2

23514610VVG

1: IGT, TVJ = 125°C2: IGT, TVJ = 25°C3: IGT, TVJ = -40°C1

4: PGAV = 0.5 WIGD, TVJ = 125°C5: PGM = 5 W6: PGM = 10 W0.1

IG = 0.3 A; tG = 30 msdiG/dt = 0.3 A/ms

110100

1000IG

mA

TVJ = 25°C; VD = 6 V; RGK = ¥TVJ = 25°C; VD = 1/2 VDRMIG = 0.3 A; diG/dt = 0.3 A/msper thyristor (diode); DC currentper module

per thyristor (diode); DC currentper module

Creeping distance on surfaceCreepage distance in airMax. allowable acceleration

Fig. 1 Gate trigger characteristics

120AIdAV100VVZ 110806040200050100TC°C150Fig. 2

Dimensions in mm (1 mm = 0.0394\")

M6x10DC output current at casetemperature

VVZ 110900A800IFSM

700

0.7

VVZ 11050 Hz80% VRRMK/W0.6ZthJC0.50.4

7TVJ = 45°C30600

3500

94807226260.3

400

TVJ = 125°C300

6.50.20.10.010-3

1554276.5C~A+321D~B-E~20010010-345610-210-112100ts10110-210-1100

t

s101

2566Fig. 3Surge overload current

IFSM: Crest value, t: duration

Fig. 4Transient thermal impedance

junction to case (per leg)

© 2000 IXYS All rights reserved

2 - 2